Microwave noise measurements on Al0.3Ga0.7As/GaAs channels grown by molecular beam epitaxy using As2 and As4

  1. Miranda, J.M.
  2. Vogt, A.
  3. Schussler, M.
  4. Shaalan, M.
  5. Matulionis, A.
  6. Sebastian, J.L.
  7. Hartnagel, H.L.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 1998

Volumen: 13

Número: 7

Pages: 833-836

Type: Article

DOI: 10.1088/0268-1242/13/7/002 GOOGLE SCHOLAR
La source de données: Scopus