Wet etching of GaN grown by molecular beam epitaxy on Si(111)

  1. Palacios, T.
  2. Calle, F.
  3. Varela, M.
  4. Ballesteros, C.
  5. Monroy, E.
  6. Naranjo, F.B.
  7. Sánchez-García, M.A.
  8. Calleja, E.
  9. Muñoz, E.
Journal:
Semiconductor Science and Technology

ISSN: 0268-1242

Year of publication: 2000

Volume: 15

Issue: 10

Pages: 996-100

Type: Article

DOI: 10.1088/0268-1242/15/10/312 GOOGLE SCHOLAR