Wet etching of GaN grown by molecular beam epitaxy on Si(111)

  1. Palacios, T.
  2. Calle, F.
  3. Varela, M.
  4. Ballesteros, C.
  5. Monroy, E.
  6. Naranjo, F.B.
  7. Sánchez-García, M.A.
  8. Calleja, E.
  9. Muñoz, E.
Revue:
Semiconductor Science and Technology

ISSN: 0268-1242

Année de publication: 2000

Volumen: 15

Número: 10

Pages: 996-100

Type: Article

DOI: 10.1088/0268-1242/15/10/312 GOOGLE SCHOLAR