Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

  1. Arana Tabernero, José Ignacio
Dirigida per:
  1. Luis Francisco López Bonilla Director/a

Universitat de defensa: Universidad Carlos III de Madrid

Fecha de defensa: 18 de de juliol de 2011

Tribunal:
  1. Ana María Carpio Rodríguez Presidenta
  2. Juan Diego Álvarez Román Secretari/ària
  3. David Sánchez Martín Vocal
  4. Holger T. Grahn Vocal
  5. Manuel Kindelán Segura Vocal
  6. Ramón Escobedo Martínez Vocal
  7. Gloria Platero Coello Vocal

Tipus: Tesi

Teseo: 308441 DIALNET lock_opene-Archivo editor

Resum

The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.