Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

  1. Arana Tabernero, José Ignacio
Dirigée par:
  1. Luis Francisco López Bonilla Directeur/trice

Université de défendre: Universidad Carlos III de Madrid

Fecha de defensa: 18 juillet 2011

Jury:
  1. Ana María Carpio Rodríguez President
  2. Juan Diego Álvarez Román Secrétaire
  3. David Sánchez Martín Rapporteur
  4. Holger T. Grahn Rapporteur
  5. Manuel Kindelán Segura Rapporteur
  6. Ramón Escobedo Martínez Rapporteur
  7. Gloria Platero Coello Rapporteur

Type: Thèses

Résumé

The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.