Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

  1. Arana Tabernero, José Ignacio
unter der Leitung von:
  1. Luis Francisco López Bonilla Doktorvater/Doktormutter

Universität der Verteidigung: Universidad Carlos III de Madrid

Fecha de defensa: 18 von Juli von 2011

Gericht:
  1. Ana María Carpio Rodríguez Präsidentin
  2. Juan Diego Álvarez Román Sekretär/in
  3. David Sánchez Martín Vocal
  4. Holger T. Grahn Vocal
  5. Manuel Kindelán Segura Vocal
  6. Ramón Escobedo Martínez Vocal
  7. Gloria Platero Coello Vocal

Art: Dissertation

Teseo: 308441 DIALNET lock_opene-Archivo editor

Zusammenfassung

The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.