Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

  1. Arana Tabernero, José Ignacio
Supervised by:
  1. Luis Francisco López Bonilla Director

Defence university: Universidad Carlos III de Madrid

Fecha de defensa: 18 July 2011

Committee:
  1. Ana María Carpio Rodríguez Chair
  2. Juan Diego Álvarez Román Secretary
  3. David Sánchez Martín Committee member
  4. Holger T. Grahn Committee member
  5. Manuel Kindelán Segura Committee member
  6. Ramón Escobedo Martínez Committee member
  7. Gloria Platero Coello Committee member

Type: Thesis

Teseo: 308441 DIALNET lock_opene-Archivo editor

Abstract

The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.