Charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias

  1. Arana Tabernero, José Ignacio
Zuzendaria:
  1. Luis Francisco López Bonilla Zuzendaria

Defentsa unibertsitatea: Universidad Carlos III de Madrid

Fecha de defensa: 2011(e)ko uztaila-(a)k 18

Epaimahaia:
  1. Ana María Carpio Rodríguez Presidentea
  2. Juan Diego Álvarez Román Idazkaria
  3. David Sánchez Martín Kidea
  4. Holger T. Grahn Kidea
  5. Manuel Kindelán Segura Kidea
  6. Ramón Escobedo Martínez Kidea
  7. Gloria Platero Coello Kidea

Mota: Tesia

Laburpena

The intention of this PhD Thesis centres on the description, the study and the mathematical development of the charge waves on photoexcited type I AI? Ga??? As/GaAs superlattices, under constant voltage and current bias. For that reason, in the second chapter, we introduce the basic and necessary concepts in order to understand the superlattices physics. By the semicondutor band structure we are able to study and define, the superlattice types and its main charge transport regime. The scattering processes are crucial to understand the charge drift velocity and the negative differential conductivity (NDC). The electron scattering process can be regulated by temperature and by the industrial growth of the superlattice.