Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

  1. Dutta, P.S.
  2. Sreedhar, A.K.
  3. Bhat, H.L.
  4. Dubey, G.C.
  5. Kumar, V.
  6. Dieguez, E.
  7. Pal, U.
  8. Piqueras, J.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 1996

Alea: 79

Zenbakia: 6

Orrialdeak: 3246-3252

Mota: Artikulua

DOI: 10.1063/1.361220 GOOGLE SCHOLAR

Garapen Iraunkorreko Helburuak

Datuen iturria: Scopus