Passivation of surface and bulk defects in p-GaSb by hydrogenated amorphous silicon treatment

  1. Dutta, P.S.
  2. Sreedhar, A.K.
  3. Bhat, H.L.
  4. Dubey, G.C.
  5. Kumar, V.
  6. Dieguez, E.
  7. Pal, U.
  8. Piqueras, J.
Revue:
Journal of Applied Physics

ISSN: 0021-8979

Année de publication: 1996

Volumen: 79

Número: 6

Pages: 3246-3252

Type: Article

DOI: 10.1063/1.361220 GOOGLE SCHOLAR

Objectifs de Développement Durable