IGNACIO
MARTIL DE LA PLAZA
Catedrático de universidad
ERIC
GARCÍA HEMME
Profesor titular de universidad
ERIC GARCÍA HEMME-rekin lankidetzan egindako argitalpenak (28)
2023
-
Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology, Vol. 38, Núm. 2
-
Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells
IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662
-
Ti supersaturated Si by microwave annealing processes
Semiconductor Science and Technology, Vol. 38, Núm. 2
-
Transport mechanisms in hyperdoped silicon solar cells
Semiconductor Science and Technology, Vol. 38, Núm. 12
2022
-
On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials, Vol. 8, Núm. 2
2018
-
Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer
Solar Energy Materials and Solar Cells, Vol. 185, pp. 61-65
2017
-
A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
2016
-
Compositional Dependence of Chemical and Electrical Properties in Cu2ZnSnS4 Thin Films
IEEE Journal of Photovoltaics, Vol. 6, Núm. 4, pp. 990-996
-
Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells
IEEE Journal of Photovoltaics, Vol. 6, Núm. 5, pp. 1059-1064
-
Insulator-to-metal transition in vanadium supersaturated silicon: Variable-range hopping and Kondo effect signatures
Journal of Physics D: Applied Physics, Vol. 49, Núm. 27
-
Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
2015
-
Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
-
Meyer Neldel rule application to silicon supersaturated with transition metals
Journal of Physics D: Applied Physics, Vol. 48, Núm. 7
2014
-
Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
Applied Physics Letters, Vol. 104, Núm. 21
2013
-
Double ion implantation and pulsed laser melting processes for third generation solar cells
International Journal of Photoenergy, Vol. 2013
-
Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Journal of Physics D: Applied Physics, Vol. 46, Núm. 13
-
Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
-
Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
Applied Physics Letters, Vol. 103, Núm. 3
-
Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
-
Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Journal of Applied Physics, Vol. 114, Núm. 5