Publicaciones en colaboración con investigadores/as de Instituto de Ciencias de la Tierra Jaume Almera (11)

2011

  1. UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

    Semiconductor Science and Technology, Vol. 26, Núm. 11

  2. Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit

    Materials Research Society Symposium Proceedings

  2. Ti-doped gallium phosphide layers with concentrations above the Mott limit

    Materials Research Society Symposium Proceedings

2009

  1. Laser thermal annealing effects on single crystal gallium phosphide

    Journal of Applied Physics, Vol. 106, Núm. 5

  2. Pulsed laser melting effects on single crystal gallium phosphide

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2007

  1. Isotopic study of the nitrogen-related modes in N+ -implanted ZnO

    Applied Physics Letters, Vol. 90, Núm. 18

  2. Raman scattering characterization of implanted ZnO

    Materials Research Society Symposium Proceedings

2003

  1. Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023

2002

  1. Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments

    International Journal of Modern Physics B

1995

  1. Electrical and optical characterisation of silicon and silicon/phosphorus implantsin InP doped with iron

    Materials Science and Technology (United Kingdom), Vol. 11, Núm. 11, pp. 1203-1206