F.J. López-rekin lankidetzan egindako argitalpenak (8)

2003

  1. Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

2002

  1. Physical properties of plasma deposited SiOx thin films

    Vacuum

  2. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum

  3. Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiO x:H films

    Journal of Applied Physics, Vol. 92, Núm. 4, pp. 1906-1913

2001

  1. Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1573-1581

2000

  1. Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1187-1192