Publicaciones en las que colabora con IGNACIO MARTIL DE LA PLAZA (152)

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

2022

  1. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

  2. William Bradford Shockley

    Revista española de física, Vol. 31, Núm. 4, pp. 56-61

2016

  1. Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

    IEEE Journal of Photovoltaics, Vol. 6, Núm. 5, pp. 1059-1064

  2. Insulator-to-metal transition in vanadium supersaturated silicon: Variable-range hopping and Kondo effect signatures

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 27

  3. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

2015

  1. Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  2. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Células solares de banda intermedia

    Revista española de física, Vol. 27, Núm. 2, pp. 20-22

  2. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  3. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  4. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  5. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

    Applied Physics Letters, Vol. 103, Núm. 3

  6. Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  7. Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

    Journal of Applied Physics, Vol. 114, Núm. 5

  8. Study of the electrical behavior in intermediate band-Si junctions

    Materials Research Society Symposium Proceedings

  9. Sub-bandgap external quantum efficiency in Ti implanted Si heterojunction with intrinsic thin layer cells

    Japanese Journal of Applied Physics, Vol. 52, Núm. 12