Publicaciones en colaboración con investigadores/as de Universidade de Lisboa (32)

2024

  1. Author Correction: Contactless doping characterization of Ga2O3 using acceptor Cd probes(Scientific Reports, 10.1038/s41598-022-18121-y)

    Scientific Reports

2022

  1. Contactless doping characterization of Ga 2O 3 using acceptor Cd probes

    Scientific Reports, Vol. 12, Núm. 1

2019

  1. EU activation in β-Ga2O3 MOVPE thin films by ion implantation

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3097-Q3102

  2. Incorporation of Europium into GaN Nanowires by Ion Implantation

    Journal of Physical Chemistry C, Vol. 123, Núm. 18, pp. 11874-11887

  3. Micro-opto-electro-mechanical device based on flexible β-Ga2O3 micro-lamellas

    ECS Journal of Solid State Science and Technology, Vol. 8, Núm. 7, pp. Q3235-Q3241

2017

  1. Doping β-Ga2O3 with europium: Influence of the implantation and annealing temperature

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 32

  2. Raman and cathodoluminescence analysis of transition metal ion implanted Ga2O3 nanowires

    Journal of Luminescence, Vol. 191, pp. 56-60

2014

  1. Doping of Ga2O3 bulk crystals and NWs by ion implantation

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Study of the relationship between crystal structure and luminescence in rare-earth-implanted Ga2O3 nanowires during annealing treatments

    Journal of Materials Science, Vol. 49, Núm. 3, pp. 1279-1285

2013

  1. A comparative study of photo-, cathodo- and ionoluminescence of GaN nanowires implanted with rare earth ions

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 306, pp. 201-206

  2. Enhanced red emission from praseodymium-doped GaN nanowires by defect engineering

    Acta Materialia, Vol. 61, Núm. 9, pp. 3278-3284

  3. Nanostructures and thin films of transparent conductive oxides studied by perturbed angular correlations

    Physica Status Solidi (B) Basic Research, Vol. 250, Núm. 4, pp. 801-808

  4. Towards the understanding of the intentionally induced yellow luminescence in GaN nanowires

    Physica Status Solidi (C) Current Topics in Solid State Physics, Vol. 10, Núm. 4, pp. 667-672

2012

  1. Doped gallium oxide nanowires for photonics

    Proceedings of SPIE - The International Society for Optical Engineering

  2. Enhanced dynamic annealing and optical activation of Eu implanted a-plane GaN

    EPL, Vol. 97, Núm. 6

2011

  1. Cathodoluminescence of rare earth implanted Ga2O3 and GeO2 nanostructures

    Nanotechnology, Vol. 22, Núm. 28

2009

  1. Structural and optical characterization of Eu-implanted GaN

    Journal of Physics D: Applied Physics, Vol. 42, Núm. 16

2008

  1. Visible and infrared luminescence study of Er doped β-Ga 2 O 3 and Er 3 Ga 5 O 12

    Journal of Physics D: Applied Physics, Vol. 41, Núm. 6

  2. Optical energies of AlInN epilayers

    Journal of Applied Physics, Vol. 103, Núm. 7

2006

  1. A microspectroscopic study of cap damage in annealed RE-doped AlN-capped

    GAN, AIN, INN AND RELATED MATERIALS