University of Montpellier-ko ikertzaileekin lankidetzan egindako argitalpenak (10)

2008

  1. The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE

    Journal of Crystal Growth, Vol. 310, Núm. 18, pp. 4069-4072

2006

  1. A microspectroscopic study of cap damage in annealed RE-doped AlN-capped

    GAN, AIN, INN AND RELATED MATERIALS

  2. A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN

    Materials Research Society Symposium Proceedings

  3. Characterization of the blue emission of Tm/Er co-implanted GaN

    Materials Research Society Symposium Proceedings

  4. Characterization of the blue emission of Tm/Er co-implanted GaN

    GAN, AIN, INN AND RELATED MATERIALS

  5. Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing

    Applied Physics Letters, Vol. 88, Núm. 3, pp. 1-3

  6. High temperature annealing of rare earth implanted GaN films: Structural and optical properties

    Optical Materials

  7. Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation

    Optical Materials

  8. Optical properties of high-temperature annealed Eu-implanted GaN

    Optical Materials

2005

  1. Selectively excited photoluminescence from Eu-implanted GaN

    Applied Physics Letters, Vol. 87, Núm. 11