ALBERTO CARLOS
RIVERA CALZADA
Catedrático de universidad
![Foto de ALBERTO CARLOS](/img/nophoto.png)
![Foto de Delft University of Technology](/img/noimage_org.png)
Delft University of Technology
Delft, HolandaPublications en collaboration avec des chercheurs de Delft University of Technology (14)
2007
-
On the interaction of molecular hydrogen with diamonds: An experimental study using nuclear probes and thermal desorption
Diamond and Related Materials, Vol. 16, Núm. 8, pp. 1479-1485
2004
-
Buried silicon dioxide formation in a precursor nanocavity layer in Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
-
Hydrogen adsorption in carbon nanostructures compared
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
-
Deuteron implantation into hexagonal silicon carbide: Defects and deuterium behaviour
EPJ Applied Physics, Vol. 23, Núm. 1, pp. 11-18
2002
2001
-
Interaction of deuterium with SIMOX buried oxide
Microelectronic Engineering
-
Native and irradiation-induced defects in SiO2 structures studied by positron annihilation techniques
Materials Science Forum
-
Positronium fractions and cavity sizes derived from 1- and 2-detector Doppler broadening spectra
Materials Science Forum
-
The behaviour of deuterium incorporated into the buried oxide of SIMOX
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000
-
Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 73, Núm. 1, pp. 77-81
1999
-
Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, Núm. 1-4, pp. 289-293
1998
-
Interaction of deuterium with the SIMOX oxide
Materials Research Society Symposium - Proceedings
1996
-
Growth of vacancy clusters during post-irradiation annealing of ion implanted silicon
Materials Research Society Symposium - Proceedings