Publicaciones en las que colabora con Luis Artus Surroca (19)

2011

  1. UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

    Semiconductor Science and Technology, Vol. 26, Núm. 11

  2. Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit

    Materials Research Society Symposium Proceedings

  2. Ti-doped gallium phosphide layers with concentrations above the Mott limit

    Materials Research Society Symposium Proceedings

2009

  1. Laser thermal annealing effects on single crystal gallium phosphide

    Journal of Applied Physics, Vol. 106, Núm. 5

  2. Pulsed laser melting effects on single crystal gallium phosphide

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Raman scattering and cathodoluminescence characterization of near lattice-matched InxAl1-xN epilayers

    Semiconductor Science and Technology, Vol. 23, Núm. 10

2007

  1. Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73

  2. Raman scattering study of undoped and As-doped GaN grown with different III/V ratios

    Semiconductor Science and Technology, Vol. 22, Núm. 10, pp. 1145-1150

2006

  1. Structural and optical properties of MOCVD InAIN epilayers

    Materials Research Society Symposium Proceedings

  2. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  3. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

  4. UV-Raman scattering study of lattice recovery by thermal annealing of Eu+ -implanted GaN layers

    Superlattices and Microstructures, Vol. 40, Núm. 4-6 SPEC. ISS., pp. 440-444

2005

  1. Effect of the implantation temperature on lattice damage of Be +-implanted GaN

    Semiconductor Science and Technology, Vol. 20, Núm. 5, pp. 374-377

  2. Electrical characterisation of (Ga,Mn,Cr)As thin films grown by molecular beam epitaxy

    Journal of Crystal Growth

  3. Optical characterisation of Bi-doped GaN films grown by molecular beam epitaxy

    Physica Status Solidi (A) Applications and Materials Science

  4. Raman-scattering study of the InGaN alloy over the whole composition range

    Journal of Applied Physics, Vol. 98, Núm. 1

2004

  1. Local vibrational modes of H complexes in Mg-doped GaN grown by molecular beam epitaxy

    Applied Physics Letters, Vol. 84, Núm. 6, pp. 897-899

2003

  1. Hydrogen-related local vibrational modes in GaN:Mg grown by molecular beam epitaxy

    Materials Research Society Symposium - Proceedings