Física de Materiales
Departamento
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Delft University of Technology
Delft, HolandaPublicacións en colaboración con investigadores/as de Delft University of Technology (22)
2023
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Optimization of multilayer graphene-based gas sensors by ultraviolet photoactivation
Applied Surface Science, Vol. 610
2021
2020
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Direct transformation of crystalline MoO3 into few-layers MoS2
Materials, Vol. 13, Núm. 10
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Symmetry Breakdown in Franckeite: Spontaneous Strain, Rippling, and Interlayer Moiré
Nano letters, Vol. 20, Núm. 2, pp. 1141-1147
2016
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Centimeter-Scale Synthesis of Ultrathin Layered MoO3 by van der Waals Epitaxy
Chemistry of Materials, Vol. 28, Núm. 11, pp. 4042-4051
2007
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Controlled self-organization of atom vacancies in monatomic gallium layers
Physical Review Letters, Vol. 99, Núm. 11
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On the interaction of molecular hydrogen with diamonds: An experimental study using nuclear probes and thermal desorption
Diamond and Related Materials, Vol. 16, Núm. 8, pp. 1479-1485
2005
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Ga-induced atom wire formation and passivation of stepped Si(112)
Physical Review B - Condensed Matter and Materials Physics, Vol. 72, Núm. 12
2004
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Buried silicon dioxide formation in a precursor nanocavity layer in Si
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
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Formation of atom wires on vicinal silicon
Physical Review Letters, Vol. 93, Núm. 12
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Hydrogen adsorption in carbon nanostructures compared
Materials Science and Engineering B: Solid-State Materials for Advanced Technology
2003
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Deuteron implantation into hexagonal silicon carbide: Defects and deuterium behaviour
EPJ Applied Physics, Vol. 23, Núm. 1, pp. 11-18
2002
2001
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Interaction of deuterium with SIMOX buried oxide
Microelectronic Engineering
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Native and irradiation-induced defects in SiO2 structures studied by positron annihilation techniques
Materials Science Forum
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Positronium fractions and cavity sizes derived from 1- and 2-detector Doppler broadening spectra
Materials Science Forum
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The behaviour of deuterium incorporated into the buried oxide of SIMOX
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000
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Oxygen-related defects in the top silicon layer of SIMOX; the effect of thermal treatments
Materials Science and Engineering B: Solid-State Materials for Advanced Technology, Vol. 73, Núm. 1, pp. 77-81
1999
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Removal of vacancy type clusters by low energy ion generated self-interstitials in crystalline silicon
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 148, Núm. 1-4, pp. 289-293