Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

  1. Méndez, B.
  2. Piqueras, J.
  3. Domínguez-Adame, F.
  4. De Diego, N.
Journal:
Journal of Applied Physics

ISSN: 0021-8979

Year of publication: 1988

Volume: 64

Issue: 9

Pages: 4466-4468

Type: Article

DOI: 10.1063/1.341269 GOOGLE SCHOLAR
Data source: Scopus