Spatial distribution of defects in GaAs:Te wafers studied by cathodoluminescence

  1. Méndez, B.
  2. Piqueras, J.
  3. Domínguez-Adame, F.
  4. De Diego, N.
Aldizkaria:
Journal of Applied Physics

ISSN: 0021-8979

Argitalpen urtea: 1988

Alea: 64

Zenbakia: 9

Orrialdeak: 4466-4468

Mota: Artikulua

DOI: 10.1063/1.341269 GOOGLE SCHOLAR
Datuen iturria: Scopus