IGNACIO
MARTIL DE LA PLAZA
Catedrático de universidad
Universidad Politécnica de Madrid
Madrid, EspañaPublikationen in Zusammenarbeit mit Forschern von Universidad Politécnica de Madrid (19)
2017
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A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
2016
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Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
2015
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Meyer Neldel rule application to silicon supersaturated with transition metals
Journal of Physics D: Applied Physics, Vol. 48, Núm. 7
2014
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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
Applied Physics Letters, Vol. 104, Núm. 21
2013
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Double ion implantation and pulsed laser melting processes for third generation solar cells
International Journal of Photoenergy, Vol. 2013
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Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Journal of Physics D: Applied Physics, Vol. 46, Núm. 13
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Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon
Applied Physics Letters, Vol. 103, Núm. 3
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Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
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Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si
Journal of Applied Physics, Vol. 114, Núm. 5
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Study of the electrical behavior in intermediate band-Si junctions
Materials Research Society Symposium Proceedings
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The Intermediate Band approach in the third solar cell generation context
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013
2012
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Ion implantation and pulsed laser melting processing for the development of an intermediate band material
AIP Conference Proceedings
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Sub-bandgap spectral photo-response analysis of Ti supersaturated Si
Applied Physics Letters, Vol. 101, Núm. 19
2005
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
2000
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High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices
Journal of Applied Physics, Vol. 87, Núm. 7, pp. 3478-3482
1995
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Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe
Journal of Electronic Materials, Vol. 24, Núm. 1, pp. 59-67
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Influence of the deposition parameters on the bonding and optical properties of SiNx ECR films
Journal of Non-Crystalline Solids, Vol. 187, pp. 329-333