Publicaciones en las que colabora con Ramón Cuscó Cornet (30)

2014

  1. Multiphononon resonant Raman scattering in He+-implanted InGaN

    Semiconductor Science and Technology, Vol. 29, Núm. 4

2011

  1. UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation

    Semiconductor Science and Technology, Vol. 26, Núm. 11

  2. Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

2010

  1. Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit

    Materials Research Society Symposium Proceedings

  2. Ti-doped gallium phosphide layers with concentrations above the Mott limit

    Materials Research Society Symposium Proceedings

2009

  1. Laser thermal annealing effects on single crystal gallium phosphide

    Journal of Applied Physics, Vol. 106, Núm. 5

  2. Pulsed laser melting effects on single crystal gallium phosphide

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2007

  1. Crystal damage assessment of Be+-implanted GaN by UV Raman scattering

    Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73

  2. Isotopic study of the nitrogen-related modes in N+ -implanted ZnO

    Applied Physics Letters, Vol. 90, Núm. 18

  3. Raman scattering characterization of implanted ZnO

    Materials Research Society Symposium Proceedings

2006

  1. Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire

    Materials Research Society Symposium Proceedings

  2. The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire

    Journal of Applied Physics, Vol. 100, Núm. 4

2005

  1. Effect of the implantation temperature on lattice damage of Be +-implanted GaN

    Semiconductor Science and Technology, Vol. 20, Núm. 5, pp. 374-377

2003

  1. Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023

  2. Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering

    Journal of Applied Physics, Vol. 93, Núm. 5, pp. 2659-2662

2002

  1. Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments

    International Journal of Modern Physics B

  2. Raman scattering by an inhomogeneous plasma in implanted semiconductors

    Solid State Communications, Vol. 121, Núm. 11, pp. 609-613

2001

  1. Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

2000

  1. Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors

    Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6567-6570

  2. Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP

    Journal of Luminescence, Vol. 87, pp. 595-597