EMILIO
NOGALES DÍAZ
Catedrático de universidad
University of Montpellier
Montpellier, FranciaPublicaciones en colaboración con investigadores/as de University of Montpellier (10)
2008
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The effect of growth temperature on the luminescence and structural properties of GaN:Tm films grown by gas-source MBE
Journal of Crystal Growth, Vol. 310, Núm. 18, pp. 4069-4072
2006
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped
GAN, AIN, INN AND RELATED MATERIALS
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A microspectroscopic study of cap damage in annealed RE-doped AlN-capped GaN
Materials Research Society Symposium Proceedings
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Characterization of the blue emission of Tm/Er co-implanted GaN
GAN, AIN, INN AND RELATED MATERIALS
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Characterization of the blue emission of Tm/Er co-implanted GaN
Materials Research Society Symposium Proceedings
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Failure mechanism of AlN nanocaps used to protect rare earth-implanted GaN during high temperature annealing
Applied Physics Letters, Vol. 88, Núm. 3, pp. 1-3
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High temperature annealing of rare earth implanted GaN films: Structural and optical properties
Optical Materials
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Lattice order in thulium-doped GaN epilayers: In situ doping versus ion implantation
Optical Materials
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Optical properties of high-temperature annealed Eu-implanted GaN
Optical Materials
2005
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Selectively excited photoluminescence from Eu-implanted GaN
Applied Physics Letters, Vol. 87, Núm. 11