Publicaciones (52) Publicaciones de ERIC GARCÍA HEMME Ver datos de investigación

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Estimation of the melting threshold of Ti supersaturated Si using time resolved reflectometry and haze measurements

    Semiconductor Science and Technology, Vol. 38, Núm. 3

  3. Fabrication of TiOx, by High Pressure Sputtering for Selective Contact in Photovoltaic Cells

    2023 14th Spanish Conference on Electron Devices (CDE)

  4. High-quality single-crystalline epitaxial regrowth on pulsed laser melting of Ti implanted GaAs

    Materials Science in Semiconductor Processing, Vol. 153

  5. Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells

    IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662

  6. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  7. Transport mechanisms in hyperdoped silicon solar cells

    Semiconductor Science and Technology, Vol. 38, Núm. 12

2022

  1. Electrical transport properties in Ge hyperdoped with Te

    Semiconductor Science and Technology, Vol. 37, Núm. 12

  2. Indium tin oxide obtained by high pressure sputtering for emerging selective contacts in photovoltaic cells

    Materials Science in Semiconductor Processing, Vol. 137

  3. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2021

  1. Correction to: Silicon-Based Intermediate-Band Infrared Photodetector Realized by Te Hyperdoping (Advanced Optical Materials, (2021), 9, 4, (2001546), 10.1002/adom.202001546)

    Advanced Optical Materials

  2. High Pressure Sputtering of materials for selective contacts in emerging photovoltaic cells

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  3. Overcoming the solid solubility limit of Te in Ge by ion implantation and pulsed laser melting recrystallization

    Proceedings of the 2021 13th Spanish Conference on Electron Devices, CDE 2021

  4. Silicon-Based Intermediate-Band Infrared Photodetector Realized by Te Hyperdoping

    Advanced Optical Materials, Vol. 9, Núm. 4

2020

  1. On the properties of GaP supersaturated with Ti

    Journal of Alloys and Compounds, Vol. 820

2018

  1. Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals

    Journal of Electronic Materials

  2. Extended Infrared Photoresponse in Te -Hyperdoped Si at Room Temperature

    Physical Review Applied, Vol. 10, Núm. 2

  3. Strong subbandgap photoconductivity in GaP implanted with Ti

    Progress in Photovoltaics: Research and Applications, Vol. 26, Núm. 3, pp. 214-222

  4. Transport mechanisms in silicon heterojunction solar cells with molybdenum oxide as a hole transport layer

    Solar Energy Materials and Solar Cells, Vol. 185, pp. 61-65

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158