Estructura de la Materia, Física Térmica y Electrónica
Departamento
Universidad de Valladolid
Valladolid, EspañaPublicaciones en colaboración con investigadores/as de Universidad de Valladolid (43)
2018
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Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals
Journal of Electronic Materials
2016
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Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications
Nanoscale Research Letters, Vol. 11, Núm. 1
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
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Scavenging effect on plasma oxidized Gd2O3 grown by high pressure sputtering on Si and InP substrates
Semiconductor Science and Technology, Vol. 30, Núm. 3
2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
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Interface quality of Sc2O3 and Gd2O 3 films based metal-insulator-silicon structures using Al, Pt, and Ti gates: Effect of buffer layers and scavenging electrodes
Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1
2012
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Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation
AIP Conference Proceedings
2011
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Electrical characterization of high-pressure reactive sputtered ScO x films on silicon
Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272
2010
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics, Vol. 107, Núm. 11
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Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon
ECS Transactions
2009
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Continuous and localized Mn implantation of ZnO
Nanoscale Research Letters, Vol. 4, Núm. 8, pp. 878-887
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
Journal of Applied Physics, Vol. 104, Núm. 9
2007
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351
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Isotopic study of the nitrogen-related modes in N+ -implanted ZnO
Applied Physics Letters, Vol. 90, Núm. 18
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Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4