Publicaciones en colaboración con investigadores/as de Universidad Politécnica de Madrid (19)

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

2016

  1. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

2015

  1. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  2. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  3. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  4. Far infrared photoconductivity in a silicon based material: Vanadium supersaturated silicon

    Applied Physics Letters, Vol. 103, Núm. 3

  5. Hydrogenated amorphous silicon deposited by high pressure sputtering for HIT solar cells

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

  6. Ruling out the impact of defects on the below band gap photoconductivity of Ti supersaturated Si

    Journal of Applied Physics, Vol. 114, Núm. 5

  7. Study of the electrical behavior in intermediate band-Si junctions

    Materials Research Society Symposium Proceedings

  8. The Intermediate Band approach in the third solar cell generation context

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013

2012

  1. Ion implantation and pulsed laser melting processing for the development of an intermediate band material

    AIP Conference Proceedings

  2. Sub-bandgap spectral photo-response analysis of Ti supersaturated Si

    Applied Physics Letters, Vol. 101, Núm. 19

2005

  1. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

  2. Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon

    2005 Spanish Conference on Electron Devices, Proceedings

2000

  1. High-quality Si-implanted In0.53Ga0.47As epitaxial layers and their application to n+ p junction devices

    Journal of Applied Physics, Vol. 87, Núm. 7, pp. 3478-3482

1995

  1. Electrical and optical characterization of Mg, Mg/P, and Mg/Ar implants into InP:Fe

    Journal of Electronic Materials, Vol. 24, Núm. 1, pp. 59-67

  2. Influence of the deposition parameters on the bonding and optical properties of SiNx ECR films

    Journal of Non-Crystalline Solids, Vol. 187, pp. 329-333