Publicaciones en colaboración con investigadores/as de Universidad Autónoma de Madrid (17)

2024

  1. Optoelectronic properties of GaP:Ti photovoltaic devices

    Materials Today Sustainability, Vol. 28

2012

  1. Interstitial Ti for intermediate band formation in Ti-supersaturated silicon

    Journal of Applied Physics, Vol. 112, Núm. 11

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

2003

  1. Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

2002

  1. Physical properties of plasma deposited SiOx thin films

    Vacuum

  2. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum

  3. Thermally induced modifications on bonding configuration and density of defects of plasma deposited SiO x:H films

    Journal of Applied Physics, Vol. 92, Núm. 4, pp. 1906-1913

2001

  1. Characterization of polycrystalline Cu(In,Ga)Te2 thin films prepared by pulsed laser deposition

    Thin Solid Films, Vol. 394, Núm. 1-2, pp. 23-28

  2. Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1573-1581

2000

  1. Defect structure of SiNx:H films and its evolution with annealing temperature

    Journal of Applied Physics, Vol. 88, Núm. 4, pp. 2149-2151

  2. Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1187-1192

1999

  1. Fabrication and characterisation of thin low-temperature MBE-compatible silicon oxides of different stoichiometry

    Thin Solid Films, Vol. 349, Núm. 1-2, pp. 135-146

  2. Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1280-1284

1998

  1. Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603

1995

  1. Role of oxygen on the dangling bond configuration of low oxygen content SiNx:H films deposited at room temperature

    Applied Physics Letters, Vol. 67, pp. 3263