Publicaciones en colaboración con investigadores/as de KU Leuven (13)

2008

  1. New developments in charge pumping measurements on thin stacked dielectrics

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 11, pp. 3184-3191

  2. Reliability of strained-Si devices with post-oxide-deposition strain introduction

    IEEE Transactions on Electron Devices, Vol. 55, Núm. 12, pp. 3432-3441

2007

  1. Accurate gate impedance determination on ultraleaky MOSFETs by fitting to a three-lumped-parameter model at frequencies from DC to RF

    IEEE Transactions on Electron Devices, Vol. 54, Núm. 7, pp. 1705-1712

  2. Charge pumping spectroscopy: HfSiON defect study after substrate hot electron injection

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 1943-1946

  3. High-κ characterization by RFCV

    ECS Transactions

  4. Line width dependent mobility in high-k - a comparative performance study between FUSI and TiN

    2007 INTERNATIONAL SYMPOSIUM ON VLSI TECHNOLOGY, SYSTEMS AND APPLICATIONS (VLSI-TSA), PROCEEDINGS OF TECHNICAL PAPERS

  5. Mobility extraction using RFCV for 80 nm MOSFET with 1 nm EOT HfSiON/TiN

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 1878-1881

  6. Negligible effect of process-induced strain on intrinsic NBTI behavior

    IEEE Electron Device Letters, Vol. 28, Núm. 3, pp. 242-244

  7. Performance assessment of (1 1 0) p-FET high-κ/MG: is it mobility or series resistance limited?

    Microelectronic Engineering, Vol. 84, Núm. 9-10, pp. 2058-2062

2006

  1. A comprehensive model to accurately calculate the gate capacitance and the leakage from DC to 100 MHz for ultra thin dielectrics

    ICMTS 2006: PROCEEDINGS OF THE 2006 INTERNATIONAL CONFERENCE ON MICROELECTRONIC TEST STRUCTURES

  2. NBTI study on PMOS devices with TiN/HfO2 gate stack and process induced strain

    ECS Transactions

  3. Optimization of sub-melt laser anneal: Performance and reliability

    2006 INTERNATIONAL ELECTRON DEVICES MEETING, VOLS 1 AND 2

  4. RF split capacitance-voltage measurements of short-channel and leaky MOSFET devices

    IEEE Electron Device Letters, Vol. 27, Núm. 9, pp. 772-774