Publicacions en què col·labora amb M.A. Fernández Fernández (9)

2005

  1. Oxygen to silicon ratio determination of SiOxHy thin films

    Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235

2003

  1. Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

2002

  1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

    Vacuum

1999

  1. Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268

  2. Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 437-440

1998

  1. Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures

    Journal of Applied Physics, Vol. 83, Núm. 1, pp. 332-338

  2. Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method

    Thin Solid Films, Vol. 317, Núm. 1-2, pp. 116-119

  3. Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603