Informática
Facultad
Universidad Politécnica de Cartagena
Cartagena, EspañaPublicaciones en colaboración con investigadores/as de Universidad Politécnica de Cartagena (15)
2022
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Innovation, Research and Development in Engineering Education. Activities of the Spanish Chapter of the IEEE Education Society: Directive Board of the IEEE Education Society Spanish Chapter 2020-2021
15th International Conference of Technology, Learning and Teaching of Electronics, TAEE 2022 - Proceedings
2013
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An Ontology-Based and Model-Driven Approach for Designing IT Service Management Systems
Best Practices and New Perspectives in Service Science and Management (IGI Global), pp. 142-159
2011
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Tracking a mobile target using visual servoing and estimation techniques
Advances in Intelligent and Soft Computing
2010
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Defining the semantics of it service management models using OWL and SWRL
KEOD 2010 - Proceedings of the International Conference on Knowledge Engineering and Ontology Development
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
2004
2003
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A high level synthesis of an auditory mechanical to neural transduction circuit
Lecture Notes in Computer Science (including subseries Lecture Notes in Artificial Intelligence and Lecture Notes in Bioinformatics)
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Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
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Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP
Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653