Publicaciones en las que colabora con Félix Lorenzo Martínez Viviente (14)

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

2004

  1. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

    Thin Solid Films

2003

  1. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

  4. Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

  5. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

    Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653

2002

  1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

    Vacuum

  2. Physical properties of plasma deposited SiOx thin films

    Vacuum

  3. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum

2001

  1. Temperature effects on the electrical properties and structure of interfacial and bulk defects in Al/SiNx:H/Si devices

    Journal of Applied Physics, Vol. 90, Núm. 3, pp. 1573-1581

2000

  1. Rapid thermal annealing effects on the structural properties and density of defects in SiO2 and SiNx: H films deposited by electron cyclotron resonance

    Journal of Applied Physics, Vol. 87, Núm. 3, pp. 1187-1192