GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
Maria
Toledano Luque
Publications dans lesquelles il/elle collabore avec Maria Toledano Luque (15)
2010
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics, Vol. 107, Núm. 11
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High quality Ti-implanted Si layers above the Mott limit
Journal of Applied Physics, Vol. 107, Núm. 10
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Ti-doped gallium phosphide layers with concentrations above the Mott limit
Materials Research Society Symposium Proceedings
2009
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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High quality Ti-implanted Si layers above solid solubility limit
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
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Laser thermal annealing effects on single crystal gallium phosphide
Journal of Applied Physics, Vol. 106, Núm. 5
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Pulsed laser melting effects on single crystal gallium phosphide
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
Journal of Applied Physics, Vol. 104, Núm. 9
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
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Titanium doped silicon layers with very high concentration
Journal of Applied Physics, Vol. 104, Núm. 1
2007
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
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Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
Applied Physics Letters, Vol. 91, Núm. 19
2005
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Physical properties of high pressure reactively sputtered TiO2
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530