RODRIGO GARCÍA HERNANSANZ-rekin lankidetzan egindako argitalpenak (28)

2023

  1. Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting

    Semiconductor Science and Technology, Vol. 38, Núm. 2

  2. Ti supersaturated Si by microwave annealing processes

    Semiconductor Science and Technology, Vol. 38, Núm. 2

2022

  1. On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes

    Advanced Electronic Materials, Vol. 8, Núm. 2

2020

  1. On the properties of GaP supersaturated with Ti

    Journal of Alloys and Compounds, Vol. 820

2018

  1. Strong subbandgap photoconductivity in GaP implanted with Ti

    Progress in Photovoltaics: Research and Applications, Vol. 26, Núm. 3, pp. 214-222

2017

  1. A robust method to determine the contact resistance using the van der Pauw set up

    Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158

  2. Vanadium supersaturated silicon system: a theoretical and experimental approach

    Journal of Physics D: Applied Physics, Vol. 50, Núm. 49

2016

  1. Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells

    IEEE Journal of Photovoltaics, Vol. 6, Núm. 5, pp. 1059-1064

  2. Insulator-to-metal transition in vanadium supersaturated silicon: Variable-range hopping and Kondo effect signatures

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 27

  3. Limitations of high pressure sputtering for amorphous silicon deposition

    Materials Research Express, Vol. 3, Núm. 3

  4. Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap

    Journal of Physics D: Applied Physics, Vol. 49, Núm. 5

2015

  1. A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications

    Journal of Applied Physics, Vol. 118, Núm. 24

  2. Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements

    Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015

  3. Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications

    Applied Physics Letters, Vol. 106, Núm. 2

  4. Meyer Neldel rule application to silicon supersaturated with transition metals

    Journal of Physics D: Applied Physics, Vol. 48, Núm. 7

2014

  1. Multiphononon resonant Raman scattering in He+-implanted InGaN

    Semiconductor Science and Technology, Vol. 29, Núm. 4

  2. Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector

    Applied Physics Letters, Vol. 104, Núm. 21

2013

  1. Double ion implantation and pulsed laser melting processes for third generation solar cells

    International Journal of Photoenergy, Vol. 2013

  2. Electrical decoupling effect on intermediate band Ti-implanted silicon layers

    Journal of Physics D: Applied Physics, Vol. 46, Núm. 13

  3. Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material

    Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013