GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
RODRIGO
GARCÍA HERNANSANZ
Profesor ayudante doctor
Publicacións nas que colabora con RODRIGO GARCÍA HERNANSANZ (28)
2023
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Ti supersaturated Si by microwave annealing processes
Semiconductor Science and Technology, Vol. 38, Núm. 2
2022
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On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials, Vol. 8, Núm. 2
2020
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On the properties of GaP supersaturated with Ti
Journal of Alloys and Compounds, Vol. 820
2018
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Strong subbandgap photoconductivity in GaP implanted with Ti
Progress in Photovoltaics: Research and Applications, Vol. 26, Núm. 3, pp. 214-222
2017
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A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
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Vanadium supersaturated silicon system: a theoretical and experimental approach
Journal of Physics D: Applied Physics, Vol. 50, Núm. 49
2016
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Deposition of Intrinsic a-Si:H by ECR-CVD to Passivate the Crystalline Silicon Heterointerface in HIT Solar Cells
IEEE Journal of Photovoltaics, Vol. 6, Núm. 5, pp. 1059-1064
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Insulator-to-metal transition in vanadium supersaturated silicon: Variable-range hopping and Kondo effect signatures
Journal of Physics D: Applied Physics, Vol. 49, Núm. 27
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Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
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Room temperature photo-response of titanium supersaturated silicon at energies over the bandgap
Journal of Physics D: Applied Physics, Vol. 49, Núm. 5
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Amorphous/crystalline silicon interface characterization by capacitance and conductance measurements
Proceedings of the 2015 10th Spanish Conference on Electron Devices, CDE 2015
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
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Meyer Neldel rule application to silicon supersaturated with transition metals
Journal of Physics D: Applied Physics, Vol. 48, Núm. 7
2014
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Multiphononon resonant Raman scattering in He+-implanted InGaN
Semiconductor Science and Technology, Vol. 29, Núm. 4
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Room-temperature operation of a titanium supersaturated silicon-based infrared photodetector
Applied Physics Letters, Vol. 104, Núm. 21
2013
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Double ion implantation and pulsed laser melting processes for third generation solar cells
International Journal of Photoenergy, Vol. 2013
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Electrical decoupling effect on intermediate band Ti-implanted silicon layers
Journal of Physics D: Applied Physics, Vol. 46, Núm. 13
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Electrical properties of silicon supersaturated with titanium or vanadium for intermediate band material
Proceedings of the 2013 Spanish Conference on Electron Devices, CDE 2013