GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
![Foto de GERMÁN](/img/nophoto.png)
![Foto de Instituto de Ciencias de la Tierra Jaume Almera](/img/noimage_org.png)
Instituto de Ciencias de la Tierra Jaume Almera
Barcelona, EspañaPublicaciones en colaboración con investigadores/as de Instituto de Ciencias de la Tierra Jaume Almera (29)
2014
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Multiphononon resonant Raman scattering in He+-implanted InGaN
Semiconductor Science and Technology, Vol. 29, Núm. 4
2011
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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
Semiconductor Science and Technology, Vol. 26, Núm. 11
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Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
2010
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Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit
Materials Research Society Symposium Proceedings
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Ti-doped gallium phosphide layers with concentrations above the Mott limit
Materials Research Society Symposium Proceedings
2009
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Laser thermal annealing effects on single crystal gallium phosphide
Journal of Applied Physics, Vol. 106, Núm. 5
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Pulsed laser melting effects on single crystal gallium phosphide
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2007
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Crystal damage assessment of Be+-implanted GaN by UV Raman scattering
Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73
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Isotopic study of the nitrogen-related modes in N+ -implanted ZnO
Applied Physics Letters, Vol. 90, Núm. 18
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Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2003
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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023
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Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
Journal of Applied Physics, Vol. 93, Núm. 5, pp. 2659-2662
2002
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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
International Journal of Modern Physics B
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Raman scattering by an inhomogeneous plasma in implanted semiconductors
Solid State Communications, Vol. 121, Núm. 11, pp. 609-613
2001
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Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000
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Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6567-6570
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Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP
Journal of Luminescence, Vol. 87, pp. 595-597
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Lattice damage study of implanted InGaAs by means of Raman spectroscopy
Journal of Luminescence, Vol. 87, pp. 721-723