GERMÁN
GONZÁLEZ DÍAZ
Catedrático de universidad
Instituto de Ciencias de la Tierra Jaume Almera
Barcelona, EspañaPublications en collaboration avec des chercheurs de Instituto de Ciencias de la Tierra Jaume Almera (29)
2014
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Multiphononon resonant Raman scattering in He+-implanted InGaN
Semiconductor Science and Technology, Vol. 29, Núm. 4
2011
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UV and visible Raman scattering of ultraheavily Ti implanted Si layers for intermediate band formation
Semiconductor Science and Technology, Vol. 26, Núm. 11
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Visible and UV Raman scattering study of lattice recovery on Ti implanted silicon layers
Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011
2010
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Raman and rutherford backscattering characterization of Ti implanted Si above Mott limit
Materials Research Society Symposium Proceedings
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Ti-doped gallium phosphide layers with concentrations above the Mott limit
Materials Research Society Symposium Proceedings
2009
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Laser thermal annealing effects on single crystal gallium phosphide
Journal of Applied Physics, Vol. 106, Núm. 5
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Pulsed laser melting effects on single crystal gallium phosphide
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2007
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Crystal damage assessment of Be+-implanted GaN by UV Raman scattering
Semiconductor Science and Technology, Vol. 22, Núm. 2, pp. 70-73
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Isotopic study of the nitrogen-related modes in N+ -implanted ZnO
Applied Physics Letters, Vol. 90, Núm. 18
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Raman scattering characterization of implanted ZnO
Materials Research Society Symposium Proceedings
2006
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Substrate influence on the high-temperature annealing behavior of GaN: Si vs. sapphire
Materials Research Society Symposium Proceedings
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The effect of substrate on high-temperature annealing of GaN epilayers: Si versus sapphire
Journal of Applied Physics, Vol. 100, Núm. 4
2003
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Evidence of phosphorus incorporation into InGaAs/InP epilayers after thermal annealing
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 9019-9023
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Study of the electrical activation of Si+-implanted InGaAs by means of Raman scattering
Journal of Applied Physics, Vol. 93, Núm. 5, pp. 2659-2662
2002
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Micro-Raman study of surface alterations in InGaAs after thermal annealing treatments
International Journal of Modern Physics B
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Raman scattering by an inhomogeneous plasma in implanted semiconductors
Solid State Communications, Vol. 121, Núm. 11, pp. 609-613
2001
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Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms
2000
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Comparison of Raman-scattering and Shubnikov-de Haas measurements to determine charge density in doped semiconductors
Journal of Applied Physics, Vol. 88, Núm. 11, pp. 6567-6570
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Generalization of the hydrodynamical model to analyze Raman scattering by free carriers: application to n-InP
Journal of Luminescence, Vol. 87, pp. 595-597
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Lattice damage study of implanted InGaAs by means of Raman spectroscopy
Journal of Luminescence, Vol. 87, pp. 721-723