Publicaciones en las que colabora con Helena Castán Lanaspa (12)

2016

  1. Electrical Characterization of Amorphous Silicon MIS-Based Structures for HIT Solar Cell Applications

    Nanoscale Research Letters, Vol. 11, Núm. 1

2011

  1. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

2004

  1. Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70

2003

  1. A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378

  2. Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates

    Materials Research Society Symposium - Proceedings

  3. Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates

    MRS Proceedings, Vol. 786

  4. Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films

    Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290

  5. Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films

    Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981