Ciencias Físicas
Fakultät
Universidad Politécnica de Cartagena
Cartagena, EspañaPublikationen in Zusammenarbeit mit Forschern von Universidad Politécnica de Cartagena (14)
2021
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Study of Cr2O3 nanoparticles supported on carbonaceous materials as catalysts for O2 reduction reaction
Journal of Electroanalytical Chemistry, Vol. 895
2015
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Rock magnetic characterization of the mine tailings in Portman Bay (Murcia, Spain) and its contribution to the understanding of the bay infilling process
Journal of Applied Geophysics, Vol. 120, pp. 48-59
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
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Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering
Journal of Physics D: Applied Physics, Vol. 40, Núm. 17, pp. 5256-5265
2006
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Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
2004
2003
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Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique
Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938
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Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators
Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures
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Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP
Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653