Universidad Politécnica de Cartagena-ko ikertzaileekin lankidetzan egindako argitalpenak (14)

2021

  1. Study of Cr2O3 nanoparticles supported on carbonaceous materials as catalysts for O2 reduction reaction

    Journal of Electroanalytical Chemistry, Vol. 895

2015

  1. Rock magnetic characterization of the mine tailings in Portman Bay (Murcia, Spain) and its contribution to the understanding of the bay infilling process

    Journal of Applied Geophysics, Vol. 120, pp. 48-59

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  2. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

    Journal of Physics D: Applied Physics, Vol. 40, Núm. 17, pp. 5256-5265

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

2004

  1. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

    Thin Solid Films

2003

  1. Characterization of nitrogen-rich silicon nitride films grown by the electron cyclotron resonance plasma technique

    Semiconductor Science and Technology, Vol. 18, Núm. 7, pp. 633-641

  2. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  3. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

  4. Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

  5. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

    Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653

2002

  1. Physical properties of plasma deposited SiOx thin films

    Vacuum

  2. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum