ENRIQUE
SAN ANDRÉS SERRANO
Catedrático de universidad
Helmholtz-Zentrum Berlin
Berlin, AlemaniaPublicaciones en colaboración con investigadores/as de Helmholtz-Zentrum Berlin (13)
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
2006
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Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
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Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024
2005
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Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
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Physical properties of high pressure reactively sputtered TiO2
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530
2004
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Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141
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Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison
Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245
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Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382
2003
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition
Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938