GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
![Foto de Helena](/img/nophoto.png)
Helena
Castán Lanaspa
Publicacions en què col·labora amb Helena Castán Lanaspa (34)
2018
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Energy Levels of Defects Created in Silicon Supersaturated with Transition Metals
Journal of Electronic Materials
2015
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A detailed analysis of the energy levels configuration existing in the band gap of supersaturated silicon with titanium for photovoltaic applications
Journal of Applied Physics, Vol. 118, Núm. 24
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Energy levels distribution in supersaturated silicon with titanium for photovoltaic applications
Applied Physics Letters, Vol. 106, Núm. 2
2013
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Experimental verification of intermediate band formation on titanium-implanted silicon
Journal of Applied Physics, Vol. 113, Núm. 2
2012
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Electrical properties of intermediate band (IB) silicon solar cells obtained by titanium ion implantation
AIP Conference Proceedings
2010
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Journal of Applied Physics, Vol. 107, Núm. 11
2009
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Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon
Journal of Applied Physics, Vol. 104, Núm. 9
2007
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Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics
Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351
2005
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A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
2004
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Conductance Transient Comparative Analysis of Electron-Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiNx, SiC 2/SiNx and SiOxNy Dielectric Films on Silicon Substrates
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 43, Núm. 1, pp. 66-70
2003
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A comparative study of anodic tantalum pentoxide and high-pressure sputtered titanium oxide
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 375-378
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Conductance transient comparative analysis of ECR-PECVD deposited SiN x, SiO2/SiNx and SiOxNy dielectric films on silicon substrates
Materials Research Society Symposium - Proceedings
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Conductance transient comparative analysis of ECR-PECVD deposited SiN<sub>x</sub>, SiO<sub>2</sub>/SiN<sub>x</sub> and SiO<sub>x</sub>N<sub>y</sub> dielectric films on silicon substrates
MRS Proceedings, Vol. 786
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Electrical characterization of MIS capacitors fabricated from ECR-PECVD silicon oxide and silicon nitride bilayer films
Journal of Materials Science: Materials in Electronics, Vol. 14, Núm. 5-7, pp. 287-290
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Interfacial State Density and Conductance-Transient Three-Dimensional Profiling of Disordered-Induced Gap States on Metal Insulator Semiconductor Capacitors Fabricated from Electron Cyclotron Resonance Plasma-Enhanced Chemical Vapor Deposited SiOxNyHz Films
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 42, Núm. 8, pp. 4978-4981
2002
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Conductance-transient three-dimensional profiling of disordered induced gap states on metal-insulator-semiconductor structures
Materials Research Society Symposium - Proceedings
2001
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C-V, DLTS and conductance transient characterization of SiNx: H/InP interface improved by N2 remote plasma cleaning of the InP surface
Journal of Materials Science: Materials in Electronics, Vol. 12, Núm. 4-6, pp. 263-267
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Electrical characterization of Al/SiNx:H/n and p-In0.53Ga0.47As structures by deep-level transient spectroscopy and conductance transient techniques
Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers, Vol. 40, Núm. 7, pp. 4479-4484