Publicaciones en las que colabora con Félix Lorenzo Martínez Viviente (20)

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

2004

  1. Bonding structure and hydrogen content in silicon nitride thin films deposited by the electron cyclotron resonance plasma method

    Thin Solid Films

2003

  1. Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029

  2. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

  3. Rapid thermal annealing effects on the electrical behavior of plasma oxidized silicon/silicon nitride stacks gate insulators

    Journal of Vacuum Science and Technology B: Microelectronics and Nanometer Structures

  4. Rapid thermally annealed plasma deposited SiNx:H thin films: Application to metal-insulator-semiconductor structures with Si, In 0.53Ga0.47 As, and InP

    Journal of Applied Physics, Vol. 94, Núm. 4, pp. 2642-2653

2002

  1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

    Vacuum

  2. Rapid thermal annealing effects on plasma deposited SiOx:H films

    Vacuum

2001

  1. Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

    Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542

  2. Lattice recovery by rapid thermal annealing in Mg+-implanted InP assessed by Raman spectroscopy

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms

  3. Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing

    Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24

  4. Molecular models and activation energies for bonding rearrangement in plasma-deposited α-SiNx: H dielectric thin films treated by rapid thermal annealing

    Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24, pp. 2453201-2453211

2000

  1. Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy

    Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537

1999

  1. Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268

  2. Optical absorption in amorphous hydrogenated silicon nitride thin films deposited by the electron cyclotron resonance plasma method and subjected to rapid thermal annealing

    Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 433-436

  3. Thermal stability of a-SiNx:H films deposited by plasma electron cyclotron resonance

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1280-1284

  4. Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 86, Núm. 4, pp. 2055-2061

1998

  1. Influence of rapid thermal annealing processes on the properties of SiNx:H films deposited by the electron cyclotron resonance method

    Journal of Non-Crystalline Solids, Vol. 227-230, Núm. PART 1, pp. 523-527