GERMÁN
GONZÁLEZ DÍAZ
Profesor emérito
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Instituto de Ciencia de Materiales de Madrid
Madrid, EspañaPublicacións en colaboración con investigadores/as de Instituto de Ciencia de Materiales de Madrid (12)
2009
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Continuous and localized Mn implantation of ZnO
Nanoscale Research Letters, Vol. 4, Núm. 8, pp. 878-887
2005
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Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
2003
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Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469
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Microstructural modifications induced by rapid thermal annealing in plasma deposited SiOxNyHz films
Journal of Applied Physics, Vol. 94, Núm. 2, pp. 1019-1029
2002
1999
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Effect of substrate temperature in SiOxNy films deposited by electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 17, Núm. 4, pp. 1263-1268
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Full composition range silicon oxynitride films deposited by ECR-PECVD at room temperature
Thin Solid Films, Vol. 343-344, Núm. 1-2, pp. 437-440
1998
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Deposition of SiNx: H thin films by the electron cyclotron resonance and its application to Al/SiNx:H/Si structures
Journal of Applied Physics, Vol. 83, Núm. 1, pp. 332-338
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Deposition of low temperature Si-based insulators by the electron cyclotron resonance plasma method
Thin Solid Films, Vol. 317, Núm. 1-2, pp. 116-119
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Good quality Al/SiNx:H/InP metal-insulator-semiconductor devices obtained with electron cyclotron resonance plasma method
Journal of Applied Physics, Vol. 83, Núm. 1, pp. 600-603
1997
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The influence of SiNx:H film properties on the electrical characteristics of metal-insulator-semiconductor devices
Semiconductor Science and Technology, Vol. 12, Núm. 12, pp. 1650-1653
1995
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Analysis of the oxygen contamination present in SiNx films deposited by electron cyclotron resonance
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films