Publicaciones en colaboración con investigadores/as de Helmholtz-Zentrum Berlin (17)

2008

  1. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

2007

  1. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

2006

  1. Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis

    Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699

2005

  1. Oxygen to silicon ratio determination of SiOxHy thin films

    Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235

  2. Physical properties of high pressure reactively sputtered TiO2

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530

2004

  1. Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices

    Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141

  2. Compositional analysis of thin SiO xN y:H films by heavy-ion ERDA, standard RBS, EDX and AES: A comparison

    Nuclear Instruments and Methods in Physics Research, Section B: Beam Interactions with Materials and Atoms, Vol. 217, Núm. 2, pp. 237-245

  3. Influence of H on the composition and atomic concentrations of "N-rich" plasma deposited SiOxNyHz films

    Journal of Applied Physics, Vol. 95, Núm. 10, pp. 5373-5382

2003

  1. Bonding configuration and density of defects of SiOxH y thin films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 94, Núm. 12, pp. 7462-7469

  2. Optical and structural properties of SiOxNyHz films deposited by electron cyclotron resonance and their correlation with composition

    Journal of Applied Physics, Vol. 93, Núm. 11, pp. 8930-8938

2002

  1. Composition and optical properties of silicon oxynitride films deposited by electron cyclotron resonance

    Vacuum

  2. Compositional analysis of SiOxNy:H films by heavy-ion ERDA: The problem of radiation damage

    Surface and Interface Analysis

2001

  1. Electrical properties of rapid thermally annealed SiNx:H/Si structures characterized by capacitance-voltage and surface photovoltage spectroscopy

    Semiconductor Science and Technology, Vol. 16, Núm. 7, pp. 534-542

  2. Molecular models and activation energies for bonding rearrangement in plasma-deposited (formula presented) dielectric thin films treated by rapid thermal annealing

    Physical Review B - Condensed Matter and Materials Physics, Vol. 63, Núm. 24

2000

  1. Compositional analysis of amorphous SiNx:H films by ERDA and infrared spectroscopy

    Surface and Interface Analysis, Vol. 30, Núm. 1, pp. 534-537

1999

  1. Thermally induced changes in the optical properties of SiNx:H films deposited by the electron cyclotron resonance plasma method

    Journal of Applied Physics, Vol. 86, Núm. 4, pp. 2055-2061

1998

  1. Influence of rapid thermal annealing processes on the properties of SiNx:H films deposited by the electron cyclotron resonance method

    Journal of Non-Crystalline Solids, Vol. 227-230, Núm. PART 1, pp. 523-527