Publicaciones en las que colabora con Maria Toledano Luque (35)

2012

  1. Time-dependent dielectric breakdown on subnanometer EOT nMOS FinFETs

    IEEE Transactions on Device and Materials Reliability, Vol. 12, Núm. 1, pp. 166-170

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Depth profile study of Ti implanted Si at very high doses

    Journal of Applied Physics, Vol. 110, Núm. 6

  3. Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  4. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  5. Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  6. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  3. High quality Ti-implanted Si layers above the Mott limit

    Journal of Applied Physics, Vol. 107, Núm. 10

  4. Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

    Journal of the Electrochemical Society, Vol. 157, Núm. 4

  5. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8

  6. Ti-doped gallium phosphide layers with concentrations above the Mott limit

    Materials Research Society Symposium Proceedings

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. High quality Ti-implanted Si layers above solid solubility limit

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  4. Interfacial properties of HfO2/SiN/Si gate structures

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  5. Laser thermal annealing effects on single crystal gallium phosphide

    Journal of Applied Physics, Vol. 106, Núm. 5

  6. Pulsed laser melting effects on single crystal gallium phosphide

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Growth and characterization of high-k dielectrics for field effect devices

    Growth and characterization of high-k dielectrics for field effect devices