Publicaciones en las que colabora con Maria Toledano Luque (18)

2011

  1. Depth profile study of Ti implanted Si at very high doses

    Journal of Applied Physics, Vol. 110, Núm. 6

2010

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Journal of Applied Physics, Vol. 107, Núm. 11

  2. High quality Ti-implanted Si layers above the Mott limit

    Journal of Applied Physics, Vol. 107, Núm. 10

  3. Ti-doped gallium phosphide layers with concentrations above the Mott limit

    Materials Research Society Symposium Proceedings

2009

  1. Effect of interlayer trapping and detrapping on the determination of interface state densities on high-k dielectric stacks

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. High quality Ti-implanted Si layers above solid solubility limit

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Laser thermal annealing effects on single crystal gallium phosphide

    Journal of Applied Physics, Vol. 106, Núm. 5

  4. Pulsed laser melting effects on single crystal gallium phosphide

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

2008

  1. Influence of interlayer trapping and detrapping mechanisms on the electrical characterization of hafnium oxide/silicon nitride stacks on silicon

    Journal of Applied Physics, Vol. 104, Núm. 9

  2. Physical properties of high pressure reactively sputtered hafnium oxide

    Vacuum, Vol. 82, Núm. 12, pp. 1391-1394

  3. Titanium doped silicon layers with very high concentration

    Journal of Applied Physics, Vol. 104, Núm. 1

2007

  1. Electrical properties of high-pressure reactive sputtered thin hafnium oxide high-k gate dielectrics

    Semiconductor Science and Technology, Vol. 22, Núm. 12, pp. 1344-1351

  2. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  3. Optical properties and structure of HfO2 thin films grown by high pressure reactive sputtering

    Journal of Physics D: Applied Physics, Vol. 40, Núm. 17, pp. 5256-5265

  4. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19

2006

  1. Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios

    Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024

2005

  1. A comparative study of the electrical properties of TiO2 films grown by high-pressure reactive sputtering and atomic layer deposition

    Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051

  2. Physical properties of high pressure reactively sputtered TiO2

    Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530