Publicaciones en las que colabora con FRANCISCO JAVIER FRANCO PELÁEZ (33)

2021

  1. Impact of DVS on Power Consumption and SEE Sensitivity of COTS Volatile SRAMs

    2021 IEEE 22nd Latin American Test Symposium, LATS 2021

  2. Impact of the Data Retention Threshold Voltage on the Cell-to-Cell SEU Sensitivity of COTS SRAMs

    RADECS 2021 - European Conference on Radiation and its Effects on Components and Systems

  3. Impact of the bitcell topology on the multiple-cell upsets observed in VLSI nanoscale SRAMs

    IEEE Transactions on Nuclear Science, Vol. 68, Núm. 9, pp. 2383-2391

  4. Thermal Neutron-induced SEUs on a COTS 28-nm SRAM-based FPGA under Different Incident Angles

    2021 IEEE 22nd Latin American Test Symposium, LATS 2021

2020

  1. Analytical reliability estimation of SRAM-based FPGA designs against single-bit and multiple-cell upsets

    Reliability Engineering and System Safety, Vol. 202

  2. Evaluation of a COTS 65-nm SRAM under 15 MeV Protons and 14 MeV Neutrons at Low VDD

    IEEE Transactions on Nuclear Science, Vol. 67, Núm. 10, pp. 2188-2195

  3. Experimental and Analytical Study of the Responses of Nanoscale Devices to Neutrons Impinging at Various Incident Angles

    IEEE Transactions on Nuclear Science, Vol. 67, Núm. 11, pp. 2345-2352

  4. Impact of High Particle Flux in Radiation Ground Tests with Protons

    2020 20th European Conference on Radiation and Its Effects on Components and Systems, RADECS 2020 - Proceedings

  5. Inherent Uncertainty in the Determination of Multiple Event Cross Sections in Radiation Tests

    IEEE Transactions on Nuclear Science, Vol. 67, Núm. 7, pp. 1547-1554

  6. Single Event Upsets under 14-MeV Neutrons in a 28-nm SRAM-Based FPGA in Static Mode

    IEEE Transactions on Nuclear Science, Vol. 67, Núm. 7, pp. 1461-1469

2019

  1. Influence of randomness during the interpretation of results from single-event experiments on SRAMs

    IEEE Transactions on Device and Materials Reliability, Vol. 19, Núm. 1, pp. 104-111

2017

  1. Sensitivity Characterization of a COTS 90-nm SRAM at Ultralow Bias Voltage

    IEEE Transactions on Nuclear Science, Vol. 64, Núm. 8, pp. 2188-2195

  2. Statistical Deviations from the Theoretical Only-SBU Model to Estimate MCU Rates in SRAMs

    IEEE Transactions on Nuclear Science, Vol. 64, Núm. 8, pp. 2152-2160