Publicaciones (54) Publicaciones de MARÍA LUISA LUCÍA MULAS

2014

  1. High pressure sputtering for kigh-k dielectric deposition. Is it worth trying?

    ECS Transactions

2013

  1. Optimization of in situ plasma oxidation of metallic gadolinium thin films deposited by high pressure sputtering on silicon

    Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics, Vol. 31, Núm. 1

2012

  1. Optimization of scandium oxide growth by high pressure sputtering on silicon

    Thin Solid Films, Vol. 526, pp. 81-86

  2. Resonant behavior of the barrier of YBa2Cu3O 7 grain boundary Josephson junctions fabricated on bicrystalline substrates with different geometries

    Physica C: Superconductivity and its Applications, Vol. 483, pp. 195-200

2011

  1. Anomalous thermal oxidation of gadolinium thin films deposited on silicon by high pressure sputtering

    Microelectronic Engineering, Vol. 88, Núm. 9, pp. 2991-2996

  2. Electrical and chemical characterization of high pressure sputtered scandium oxide for memory applications

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  3. Electrical characterization of high-pressure reactive sputtered ScO x films on silicon

    Thin Solid Films, Vol. 519, Núm. 7, pp. 2268-2272

  4. Interface engineering by metal electrode scavenging of Gd2O 3 films sputtered on Si

    Proceedings of the 8th Spanish Conference on Electron Devices, CDE'2011

  5. Towards metal electrode interface scavenging of rare-earth scandates: A Sc2O3 and Gd2O3 study

    Microelectronic Engineering

2010

  1. Electrical characterization of high-pressure reactive sputtered Sc 2O3 films on silicon

    ECS Transactions

  2. Nitridation of Si by N2 electron cyclotron resonance plasma and integration with ScOx deposition

    Journal of the Electrochemical Society, Vol. 157, Núm. 4

  3. Nitridation of Si by N[sub 2] Electron Cyclotron Resonance Plasma and Integration with ScO[sub x] Deposition

    Journal of The Electrochemical Society, Vol. 157, Núm. 4

  4. Scandium oxide deposited by high-pressure sputtering for memory devices: Physical and interfacial properties

    Journal of Applied Physics, Vol. 107, Núm. 8

2009

  1. Growth of silicon nitride on silicon by electron cyclotron resonance plasma nitridation

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  2. Interfacial properties of HfO2/SiN/Si gate structures

    Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09

  3. Structural image of the barrier of YBa2Cu3O7 grain boundary josephson junctions based on the analysis of the electromagnetic parameters

    IEEE Transactions on Applied Superconductivity

2008

  1. Fiske steps and hysteresis in YBa2 Cu3 O7 grain boundary Josephson junctions: Structural information of the barrier by means of a nondestructive approach

    Journal of Applied Physics, Vol. 104, Núm. 11

2007

  1. Dispersion relation of the dielectric constant of YBa2Cu 3O7 grain boundary josephson junctions tilted around different axes

    IEEE Transactions on Applied Superconductivity

  2. High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties

    Journal of Applied Physics, Vol. 102, Núm. 4

  3. Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2

    Applied Physics Letters, Vol. 91, Núm. 19