IGNACIO
MARTIL DE LA PLAZA
Catedrático de universidad
ENRIQUE
SAN ANDRÉS SERRANO
Catedrático de universidad
Publikationen, an denen er mitarbeitet ENRIQUE SAN ANDRÉS SERRANO (40)
2023
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Electronic transport properties of Ti-supersaturated Si processed by rapid thermal annealing or pulsed-laser melting
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Inversion Charge Study in TMO Hole-Selective Contact-Based Solar Cells
IEEE Journal of Photovoltaics, Vol. 13, Núm. 5, pp. 656-662
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Ti supersaturated Si by microwave annealing processes
Semiconductor Science and Technology, Vol. 38, Núm. 2
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Transport mechanisms in hyperdoped silicon solar cells
Semiconductor Science and Technology, Vol. 38, Núm. 12
2022
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On the Optoelectronic Mechanisms Ruling Ti-hyperdoped Si Photodiodes
Advanced Electronic Materials, Vol. 8, Núm. 2
2017
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A robust method to determine the contact resistance using the van der Pauw set up
Measurement: Journal of the International Measurement Confederation, Vol. 98, pp. 151-158
2016
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Limitations of high pressure sputtering for amorphous silicon deposition
Materials Research Express, Vol. 3, Núm. 3
2010
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High quality Ti-implanted Si layers above the Mott limit
Journal of Applied Physics, Vol. 107, Núm. 10
2009
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High quality Ti-implanted Si layers above solid solubility limit
Proceedings of the 2009 Spanish Conference on Electron Devices, CDE'09
2008
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Physical properties of high pressure reactively sputtered hafnium oxide
Vacuum, Vol. 82, Núm. 12, pp. 1391-1394
2007
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High-pressure reactively sputtered Hf O2: Composition, morphology, and optical properties
Journal of Applied Physics, Vol. 102, Núm. 4
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Optical spectroscopic study of the SiN/HfO2 interfacial formation during rf sputtering of HfO2
Applied Physics Letters, Vol. 91, Núm. 19
2006
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Compositional analysis of polycrystalline hafnium oxide thin films by heavy-ion elastic recoil detection analysis
Thin Solid Films, Vol. 515, Núm. 2 SPEC. ISS., pp. 695-699
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Hafnium oxide thin films deposited by high pressure reactive sputtering in atmosphere formed with different Ar/O2 ratios
Materials Science in Semiconductor Processing, Vol. 9, Núm. 6, pp. 1020-1024
2005
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A comparative study of the electrical properties of TiO<sub>2</sub>films grown by high-pressure reactive sputtering and atomic layer deposition
Semiconductor Science and Technology, Vol. 20, Núm. 10, pp. 1044-1051
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Interface quality of high-pressure reactive sputtered and atomic layer deposited titanium oxide thin films on silicon
2005 Spanish Conference on Electron Devices, Proceedings
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On the influence of substrate cleaning method and rapid thermal annealing conditions on the electrical characteristics of Al/SiNx/SiO 2/Si fabricated by ECR-CVD
Microelectronics Reliability
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Oxygen to silicon ratio determination of SiOxHy thin films
Thin Solid Films, Vol. 492, Núm. 1-2, pp. 232-235
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Physical properties of high pressure reactively sputtered TiO2
Journal of Vacuum Science and Technology A: Vacuum, Surfaces and Films, Vol. 23, Núm. 6, pp. 1523-1530
2004
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Annealing effects on the interface and insulator properties of plasma-deposited Al/SiOxNyHz/Si devices
Semiconductor Science and Technology, Vol. 19, Núm. 2, pp. 133-141